Title:
エッチングする方法及びプラズマ処理装置
Document Type and Number:
Japanese Patent JP6811202
Kind Code:
B2
Abstract:
A method of etching selectively etches a first region of a substrate with respect to a second region of the substrate formed of a different material from the first region. A deposition film is formed of a chemical species included in plasma generated from a first gas. A gaseous precursor is supplied to the substrate having the deposition film formed thereon to form an adsorption film on the substrate from the precursor. Ions from plasma generated from a second gas are supplied to the substrate having the deposition film and the adsorption film formed thereon so as to cause a reaction between the material of the first region and a chemical species included in the deposition film, so that the first region is etched. The adsorption film reduces the etching rate of the second region during the etching of the first region.
Inventors:
Takayuki Katsunuma
Application Number:
JP2018079147A
Publication Date:
January 13, 2021
Filing Date:
April 17, 2018
Export Citation:
Assignee:
東京エレクトロン株式会社
International Classes:
H01L21/3065; H05H1/46
Domestic Patent References:
| JP2016028424A | ||||
| JP2002319574A | ||||
| JP2015144249A | ||||
| JP2014209515A | ||||
| JP2017535057A | ||||
| JP2017204531A | ||||
| JP2013118359A |
Attorney, Agent or Firm:
Yoshiki Hasegawa
Yoshiki Kuroki
Junji Kashiwaoka
Yoshiki Kuroki
Junji Kashiwaoka