Title:
ETCHING METHOD OF SEMICONDUCTOR SUBSTRATE ACCORDING TO GAS PLASMA
Document Type and Number:
Japanese Patent JPS59172235
Kind Code:
A
Abstract:
PURPOSE:To reduce dispersion of an etching speed according to the variation with time of a chemical used for etching and dependence upon the pattern area, and to form the etching surface to be in the mirror condition having no roughness by a method wherein a semiconductor substrate is etched in plasma containing CF4 and O2. CONSTITUTION:A silicon oxide film 32 is formed on a silicon semiconductor substrate 31. A resist is applied on the silicon oxide film 32, and a pattern is formed with the resist according to the photo-etching method. The silicon oxide film 32 is etched using the resist thereof as a mask. After then, the resist thereof is removed. Then, the silicon semiconductor substrate 31 is put in an etching chamber 25 to be exposed in plasma of CF4 and O2. Accordingly, the silicon semiconductor substate 31 is etched making the silicon oxide film 32 as a mask. At this time, when the ratio of O2 and CF4 (O2/CF4) in plasma is made to 0.3- 0.7, the surface of the etched silicon semiconductr substrate 31 can be prevented from generation of roughness.
Inventors:
OKUTSU KINNOSUKE
TAKAHASHI HIDEKAZU
TAKAHASHI HIDEKAZU
Application Number:
JP4544983A
Publication Date:
September 28, 1984
Filing Date:
March 18, 1983
Export Citation:
Assignee:
TOSHIBA KK
International Classes:
H01L21/302; H01L21/3065; (IPC1-7): H01L21/302
Attorney, Agent or Firm:
Takehiko Suzue