Title:
エッチング方法
Document Type and Number:
Japanese Patent JP7223507
Kind Code:
B2
Abstract:
An etching method includes: preparing a workpiece including a metal multilayer film having a magnetic tunnel junction and a mask formed by an inorganic material on the metal multilayer film; and etching the metal multilayer film by plasma of a mixed gas of ethylene gas and oxygen gas using the mask.
Inventors:
Ken Ando
Hiroki Maehara
Atsushi Sato
Kiyoshi Maeda
Tahara
Hiroki Maehara
Atsushi Sato
Kiyoshi Maeda
Tahara
Application Number:
JP2018063934A
Publication Date:
February 16, 2023
Filing Date:
March 29, 2018
Export Citation:
Assignee:
東京エレクトロン株式会社
International Classes:
H01L21/3065; H10B61/00; H10N50/01; H10N50/10
Domestic Patent References:
JP2008504683A |
Foreign References:
WO2012176747A1 | ||||
WO2009104789A1 | ||||
WO2008129605A1 | ||||
US20140061827 |
Attorney, Agent or Firm:
Yoshiki Hasegawa
Yoshiki Kuroki
Junji Kashiwaoka
Teppei Omori
Yoshiki Kuroki
Junji Kashiwaoka
Teppei Omori