Title:
ETCHING METHOD
Document Type and Number:
Japanese Patent JPS60152031
Kind Code:
A
Abstract:
PURPOSE:To enable Ta2O3 to have a larger selection ratio of etching rate to Si3N4 and SiO2 when an etching is performed on the Ta2O3 by a method wherein the Ta2O3 is performed a processing by discharge in boron trichloride or carbon tetrachloride-containing gas. CONSTITUTION:When etching is performed on Ta2O3 using a dry etching device, the Ta2O3 is performed an processing by discharge in boron trichloride or carbon tetrachloride-containing gas. Or, the Ta2O3 is performed a processing by discharge in gas containing boron trichloride, wherein freon of less than 32vol% has been mixed. Or, the Ta2O3 is performed a processing by discharge in gas containing carbonic gas tetrachloride, wherein oxygen of less than 50vol% has been mixed. As a result, the selectivity, which has not ever been obtained with reaction gas of the greon series, can be significantly improved.
Inventors:
OGAWA YOSHIFUMI
SAKUMA NORIYUKI
NISHIOKA TAIJIYOU
MUKAI KIICHIROU
SAKUMA NORIYUKI
NISHIOKA TAIJIYOU
MUKAI KIICHIROU
Application Number:
JP711184A
Publication Date:
August 10, 1985
Filing Date:
January 20, 1984
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L21/302; H01L21/3065; (IPC1-7): H01L21/302
Domestic Patent References:
| JPS596541A | 1984-01-13 | |||
| JPS54158343A | 1979-12-14 |
Attorney, Agent or Firm:
Toshiyuki Usuda (1 outside)