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Title:
酸化インジウム系透明導電膜用エッチング液組成物及びそれを用いたエッチング方法
Document Type and Number:
Japanese Patent JP5030403
Kind Code:
B2
Abstract:
An etchant for removing an indium oxide layer includes sulfuric acid as a main oxidizer, an auxiliary oxidizer such as H3PO4, HNO3, CH3COOH, HClO4, H2O2, and a Compound A that is obtained by mixing potassium peroxymonosulfate (2KHSO5), potassium bisulfate (KHSO4), and potassium sulfate (K2SO4) together in the ratio of 5:3:2, an etching inhibitor comprising an ammonium-based material, and water. The etchant may remove desired portions of the indium oxide layer without damage to a photoresist pattern or layers underlying the indium oxide layer.

Inventors:
Zhao Hiroshi
Lee Seung
Lee Shun
Lee
Senjo Hou
Cui Yong
Park Eit
Kim Jin Soo
Kim Kei
Choi Dong Asahi
Hayashi Sawa
Application Number:
JP2005243577A
Publication Date:
September 19, 2012
Filing Date:
August 25, 2005
Export Citation:
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Assignee:
Samsung Electronics Company Limited
DONGWOO FINE-CHEM CO., LTD.
International Classes:
C09K13/06; H01B13/00; H01L21/306; H01L21/3213; H01L21/768
Domestic Patent References:
JP2000008184A
JP60186020A
JP60186019A
JP2007519828A
JP200351496A
JP1195248A
JP10135465A
Attorney, Agent or Firm:
Takahashi Hayashi & Partners



 
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