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Title:
ETCHING SYSTEM, AND ETCHING METHOD
Document Type and Number:
Japanese Patent JP2009149959
Kind Code:
A
Abstract:

To provide a low-cost technique which can remove a sacrificial layer below the bottom face of a micropore.

A buffer tank 35 is connected to a reaction chamber 6, the buffer tank 35 is filled with an etching gas generated by heating a gas feeder 31 arranged with solid XeF2, the reaction chamber 6 and the buffer tank 35 are connected, the etching gas is introduced, and, while irradiating the object to be treated with ultraviolet rays, it is contacted with the etching gas. Since etching is performed without generating plasma, a sacrificial layer below the bottom face of a micropore can be etched.


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Inventors:
TAKEI HIDEO
IKEDA SATOSHI
ITO TSUTOMU
Application Number:
JP2007330712A
Publication Date:
July 09, 2009
Filing Date:
December 21, 2007
Export Citation:
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Assignee:
ULVAC CORP
International Classes:
C23F4/00; H01L21/302
Domestic Patent References:
JPH10317169A1998-12-02
JPH062143A1994-01-11
JPH04296023A1992-10-20
JP2005136013A2005-05-26
JP2006100795A2006-04-13
JP2004525253A2004-08-19
JP2004518271A2004-06-17
Foreign References:
WO2005124827A22005-12-29
WO2007127865A22007-11-08
Attorney, Agent or Firm:
Shigeo Ishijima
Hideki Abe



 
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