Title:
ETCHING SYSTEM AND ETCHING METHOD
Document Type and Number:
Japanese Patent JP2015130539
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a method and apparatus for adjusting the temperature of a wafer.SOLUTION: An etching system 100 for etching a material of a wafer has a measuring device 114, an etching chamber 102 and a controller 112. The measuring device 114 measures a critical dimension test feature (CD) along the profile of the wafer at a plurality of preset locations. The etching chamber 102 includes a chuck 108 supporting the wafer and a plurality of heating elements 110 positioned adjacently to preset locations within the chuck 108 and receives the wafer from the measuring device 114. The controller 112 is coupled to the measuring device 114 to receive the CD and the plurality of heating elements 110. The controller 112 adjusts the temperature of each heating element during a process to reduce the variation of critical dimensions among the plurality of preset locations by using temperature dependent etching characteristics of an etch process to compensate for CD variation introduced by a lithography process preceding the etch process.
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Inventors:
ROBERT J STEGER
Application Number:
JP2015081870A
Publication Date:
July 16, 2015
Filing Date:
April 13, 2015
Export Citation:
Assignee:
LAM RES CORP
International Classes:
H01L21/3065; F27B5/14; F27B17/00; F27D19/00; F27D21/00; F27D99/00; H01J37/32; H01L21/00; H01L21/306; H01L
Attorney, Agent or Firm:
Masayuki Masabayashi