Title:
EVALUATING DEVICE FOR SEMICONDUCTOR ELEMENT
Document Type and Number:
Japanese Patent JPH05283497
Kind Code:
A
Abstract:
PURPOSE: To provide a semiconductor element evaluation device, which aims at realizing the evaluation of the quality of the interface between an oxide film and a silicon film at high speed.
CONSTITUTION: A semiconductor element evaluation device is a device for evaluating the quality of the interface between an oxide film 22 and a silicon film 20 using a MOSFET element and is provided with a power supply 11 for applying a voltage to a gate electrode 21, a power supply 12 for applying a voltage to a drain 24, a current amplifier 13 for amplifying a drain current and a spectral density measuring device 14 for measuring the spectral density of a voltage signal output from this current amplifier.
Inventors:
Hirotaka Muto
Koichiro Nakanishi
Koichiro Nakanishi
Application Number:
JP7955492A
Publication Date:
October 29, 1993
Filing Date:
April 01, 1992
Export Citation:
Assignee:
Mitsubishi Electric Corporation
International Classes:
G01N27/00; H01L21/66; (IPC1-7): H01L21/66
Attorney, Agent or Firm:
Takada Mamoru
Previous Patent: JPS5283496
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