EVALUATING METHOD FOR COMPOUND SEMICONDUCTOR LAYER

Japanese Patent JP3544229

B2

PURPOSE: To measure the distribution of micro compositions in the depth of a compound semiconductor layer and minute changes in the composition of the interface of the compound semiconductor layer by subjecting the compound semiconductor layer to machining for inclining its cross section, and subjecting the machined surface to spectral analysis using photoluminescence (PL) method.
CONSTITUTION: A compound semiconductor layer grown on a substrate is subjected to inclined machining by immersion in an etchant which is given a concentration gradient, and the machined surface is subjected to spectrum analysis using PL method. The PL method is widely used in the evaluation of compound semiconductors. A sample 3 is illuminated with a laser beam 2 from a laser 1, and luminescence 4 emitted from the sample 3 excited by the laser beam is subjected to spectral diffraction by means of a diffraction grating 5. A PL spectrum is obtained through the detection of the luminescence by the use of a detector 6, and the sample 3 is evaluated from the peak wavelength of the spectrum, intensity at the peak wavelength, or its half-value width. Therefore, the distribution of compositions in the depth of the layer, and changes in the composition of the interface of the layer can be measured with accuracy.

JP2005291831	IMAGING FLOW SITE METER
WO/2018/182510	NANOMATERIAL-BASED BACTERIAL SENSORS
JP2638085	INDUSTRIAL APPLICABILITY INDUSTRIAL APPLICABILITY

Masashi Nakamura

JP24680294A

July 21, 2004

September 16, 1994

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Nikko Materials Co., Ltd.

G01N21/64; G01N1/28; G01N1/32; H01L21/66; (IPC1-7): G01N21/64; G01N1/28; G01N1/32; H01L21/66

JP63308542A
JP53144395A

Isamu Ogoshi

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