Title:
EVALUATING METHOD OF QUALITY OF SILICON WAFER
Document Type and Number:
Japanese Patent JP09064135
Kind Code:
A
Abstract:
To provide analyzing technique for evaluating the form of a crystal defect by using OPP.
The evaluating method of a silicon wafer discriminating the form of a crystal defect by investigating the change of signal strength at a time when the angle of the crystal defect and the polarizing direction of a laser is changed and the signal strength is measured when the signal strength obtained when the crystal defect in a silicon wafer is measured through an infrared interferometry method (OPP) as a crystal-defect evaluating device is analyzed and the defect is evaluated is provided.
Inventors:
Nakai, Katsuhiko
Harada, Hirobumi
Haga, Hirotsugu
Harada, Hirobumi
Haga, Hirotsugu
Application Number:
JP1995000214861
Publication Date:
March 07, 1997
Filing Date:
August 23, 1995
Export Citation:
Assignee:
NIPPON STEEL CORP
International Classes:
G01N21/88; G01N21/00; G01N21/35; G01N21/956; H01L21/66; G01N21/88; G01N21/00; G01N21/31; H01L21/66; (IPC1-7): H01L21/66; G01N21/00; G01N21/35; G01N21/88