PURPOSE: To evaluate the cross-sectional profile of an element affecting the performance or reliability of a semiconductor device easily and nondestructively in a short time.

CONSTITUTION: The evaluation equipment for semiconductor device comprises a laser light source 1 for irradiating a wafer 9 with a laser beam B obliquely from above, a two-dimensional CCD sensor 2 secured mechanically to the laser light source 1 and receiving the light R reflected on the surface of the wafer 9, a laser scanning section 3 for scanning on the surface of the wafer 9 with the laser beam B, a signal processing section 4 for extracting the image signal D of the two-dimensional CCD sensor 2 which received the first order reflection light R, a memory section 5 for storing the image signal D, and an image output section 6 for converting the image signal E into an image 12 based on the image signal E read out from the memory section 5 and the scanning data of laser beam.