Title:
EVAPORATIVE SOURCE UNIT FOR MOLECULAR BEAM EPITAXY
Document Type and Number:
Japanese Patent JP3176968
Kind Code:
B2
Abstract:
PURPOSE: To provide the subject evaporative source unit intended to improve a thin film to be produced, so designed that a crucible is immersed in a fluid heating medium to heat an evaporable material in the crucible, thereby the material can stably be evaporated at a specified temperature with a specific evaporation rate.
CONSTITUTION: For the subject molecular beam epitaxy, an evaporable material (e.g. Zn, S) in a crucible installed in each of plural evaporative source units is heated and put to vacuum deposition on a substrate set in a vacuum chamber, thus forming e.g. a ZnS film. For the evaporative source 5 for S, low temperature-side evaporative part A and high temperature-side evaporative part B are mutually connected via a connective tube 12. In the evaporative part B, the vapor channel for the evaporable material (S) is equipped with a heater 26, thus decomposing the material (S) evaporated. While, in the evaporative part A, the crucible 13 is immersed in a circulating heating medium 16 (e.g. oil), thereby evaporating the material (S) in the crucible 13. This heating medium 16 is heated to a specified temperature by a heat exchanger during circulation.
Inventors:
Toshio Negishi
Hiroyuki Fukasawa
Hiroyuki Fukasawa
Application Number:
JP35688291A
Publication Date:
June 18, 2001
Filing Date:
December 24, 1991
Export Citation:
Assignee:
Nippon Vacuum Technology Co., Ltd.
International Classes:
C23C14/22; C30B23/08; H01L21/203; (IPC1-7): C30B23/08; H01L21/203
Domestic Patent References:
| JP6451392A | ||||
| JP429664U |
Attorney, Agent or Firm:
Yasuo Iisaka