To lower the temperature of the exhaust gas generated during the manufacturing process of semiconductor without requiring a large amount of cooling air.
The treatment apparatus A has a combustion chamber 1, a secondary air inlet hole 9, a combustion exhaust gas discharge path 4 and a heat exchanger 5 provided near the combustion chamber 1. The combustion exhaust gas discharge path 4 is connected to a supply port of the heat exchanger 5, and the combustion chamber 1 and the heat exchanger 5 are housed in a storage container 6. The combustion chamber 1 has a closed end, on the side of which an exhaust gas supply path 2 and a burner 3 are arranged. The burner 3 raises the temperature of the exhaust gas supplied into the combustion chamber 1 to decompose or burn it, and the heat exchanger 5 lowers the temperature of the gas with the air taken in from the secondary air inlet hole 9 to discharge it.
BOKU HEISHO
KIN HEITETSU
NAKAMURA KENICHI
SUGIHARA KENICHI
SEO ATSUKO
TOKYO GAS CHEMICALS CO LTD
TOKYO GAS CO LTD
Hiroyuki Nakagawa
Kosuke Tobita
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