PURPOSE: To provide an exposure mask suppressing an adverse effect caused by an interference between surrounding patterns (subshifters) arranged at a surrounding part of a central pattern and an exposing method.
CONSTITUTION: Pattern groups which have central patterns C11, C12 and surrounding patterns S11 to S14, S11' to S14', such as subshifter patterns positioned at the surrounding part of the central patterns, are arranged adjacently to form the exposure mask. In the exposure mask, the mutual interferences between adjacent surrounding patterns(S11' and S11) are reduced by giving an angle therebetween, giving a phase difference thereto and lessening a light transmission quantity by unifying surrounding patterns. The exposing method using the exposure mask is also obtained.
NEGISHI MICHIO
SHIMIZU HIDEO
