To carry out exposure for erasing any unnecessary pattern in the periphery of a wafer, and for forming a predetermined difference in level in the periphery of the wafer without deteriorating most of through-put, or using any special reticle formed with various patterns.

An auxiliary pattern board 33 formed with a slit pattern 36 and a pattern 37 for difference in level is set at a position adjacent to a scanning direction to the holding face of a reticle R of a reticle stage 31 of a scanning type exposure device. When exposure is carried out to the periphery of a wafer W, the slit pattern 36 or the pattern 37 for difference in level are moved to an illumination region 35 of exposure rays of light, and exposure is carried out while the wafer W is moved.