To manufacture a hole array of high density regarding an exposure method for forming a hole array executed in a lithography process, and a device manufacturing method using the method.

A mask R wherein a prescribed pattern is formed is illuminated under cross pole illumination conditions, a wafer W is exposed via a projection optical system PL by light IL projected from the mask, and a hole array is formed on the wafer. Therefore, it is possible to apply limit resolution of a k1 factor which is the same as that of an L/S pattern, even to a hole array pattern, thus enabling a hole array of high density to be manufactured.