Title:
露光プロセスモニタ方法
Document Type and Number:
Japanese Patent JP4065817
Kind Code:
B2
Abstract:
In monitoring of an exposure process, a highly isolative pattern greatly changed in a shape of cross section by fluctuations in the exposure dose and the focal position is an observation target. Especially, to detect a change in a resist shape of cross section from a tapered profile to an inverse tapered profile, one of the following observation methods is employed to obtain observation data: (1) a tilt image of a resist pattern is imaged by using tilt imaging electron microscopy, (2) an electron beam image of a resist pattern is imaged under imaging conditions for generating asymmetry on an electron beam signal waveform, and (3) scattering characteristic data of a resist pattern is obtained by an optical measurement system. The observation data is applied to model data created beforehand in accordance with the exposure conditions to estimate fluctuations in the exposure dose and the focal position.
Inventors:
Chie Shishido
Hidetoshi Morokuma
Yuki Kojima
Maki Tanaka
Wataru Nagatomo
Hidetoshi Morokuma
Yuki Kojima
Maki Tanaka
Wataru Nagatomo
Application Number:
JP2003207252A
Publication Date:
March 26, 2008
Filing Date:
August 12, 2003
Export Citation:
Assignee:
Hitachi High-Technologies Corporation
International Classes:
H01L21/66; G03C5/00; G03F7/20; G03F9/00; H01L21/027
Domestic Patent References:
| JP11288879A | ||||
| JP3266444A | ||||
| JP61097510A | ||||
| JP63225110A | ||||
| JP2000162783A | ||||
| JP2003173948A |
Attorney, Agent or Firm:
Manabu Inoue