Title:
外部共振器型半導体レーザ
Document Type and Number:
Japanese Patent JP7364850
Kind Code:
B2
Abstract:
An external-cavity semiconductor laser includes a semiconductor laser element containing a gallium nitride material, a first lens disposed in an optical path of light emitted from the semiconductor laser element, a wavelength selective element disposed in an optical path of light transmitted through the first lens and configured to selectively transmit light having a predetermined wavelength, a second lens disposed in an optical path of light transmitted through the wavelength selective element, an output coupler disposed in an optical path of light condensed through the second lens, and a light-transmissive protective member bonded to at least one surface of the output coupler. The second lens is configured to cause light transmitted through the second lens and incident on the output coupler to form an image on a surface of the output coupler. The protective member covers the surface of the output coupler on which the image is formed.
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Inventors:
Tetsushi Takano
Hisashi Ogawa
Hidetoshi Katori
Hisashi Ogawa
Hidetoshi Katori
Application Number:
JP2019077969A
Publication Date:
October 19, 2023
Filing Date:
April 16, 2019
Export Citation:
Assignee:
Nichia Corporation
International Classes:
H01S5/14; H01S5/0239; H01S5/343
Domestic Patent References:
| JP2019029428A | ||||
| JP52156642A | ||||
| JP62042477A | ||||
| JP7029693A | ||||
| JP8204281A | ||||
| JP10332913A | ||||
| JP2002141609A | ||||
| JP2001318396A | ||||
| JP2004535068A | ||||
| JP2010525594A | ||||
| JP2008276007A | ||||
| JP2007310363A | ||||
| JP2012094622A |
Foreign References:
| US20140003818 | ||||
| WO2008119363A1 |
Other References:
THOMPSON, Daniel J. et al.,Narrow linewidth tunable external cavity diode laser using wide bandwidth filter,Review of Scientific Instruments,米国,American Institute of Physics,2012年02月24日,Vol.83, No.2,p.023107,https://doi.org/10.1063/1.3687441
Attorney, Agent or Firm:
Koji Toyosu
Yasuhiro Toyosu
Yasuhiro Toyosu
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