Title:
EXTREME ULTRAVIOLET LITHOGRAPHY PROCESS AND MASK WITH REDUCED SHADOW EFFECT AND ENHANCED INTENSITY
Document Type and Number:
Japanese Patent JP2015103810
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide extreme ultraviolet lithography process and a mask with reduced shadow effect and enhanced intensity.SOLUTION: A mask is an extreme ultraviolet lithography (EUVL) mask. The mask includes: a first state and a second state different from each other; a first main polygon and a second main polygon adjacent to the first main polygon; a plurality of sub-resolution assist polygons; and a field. Each of the first and second main polygons, the sub-resolution assist polygons, and the field has an associated state. The state assigned to the first main polygon is different from the state assigned to the second main polygon. The plurality of assist polygons are assigned to the same state, which is different from a state assigned to the field.
More Like This:
| JP2005026241 | ELECTRON BEAM GENERATING DEVICE AND ELECTRON BEAM EXPOSURE DEVICE |
| JPS5512750 | RESIST APPLICATION DEVICE |
| JPS6088338 | [Title of the device] Photomask |
Inventors:
LU YEN-CHENG
YU SHINN SHENG
CHEN JENG-HORNG
YEN ANTHONY
YU SHINN SHENG
CHEN JENG-HORNG
YEN ANTHONY
Application Number:
JP2014236676A
Publication Date:
June 04, 2015
Filing Date:
November 21, 2014
Export Citation:
Assignee:
TAIWAN SEMICONDUCTOR MFG
International Classes:
H01L21/027; G02B19/00; G03F1/24
Domestic Patent References:
| JP2009043789A | 2009-02-26 | |||
| JPH10115932A | 1998-05-06 | |||
| JP2003273013A | 2003-09-26 | |||
| JP2009043789A | 2009-02-26 |
Foreign References:
| US20140011120A1 | 2014-01-09 | |||
| US20140011120A1 | 2014-01-09 |
Attorney, Agent or Firm:
Asahina Patent Office
Previous Patent: CIRCUIT BOARD INCLUDING CERAMIC INLAY
Next Patent: ELECTRONIC DEVICE, CASE AND BOBBIN HOLDER
Next Patent: ELECTRONIC DEVICE, CASE AND BOBBIN HOLDER