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Title:
極度に硬いダイヤモンド及びその製法
Document Type and Number:
Japanese Patent JP4960090
Kind Code:
B2
Abstract:
A single crystal diamond grown by microwave plasma chemical vapor deposition annealed at pressures in excess of 4.0 GPa and heated to temperature in excess of 1500 degrees C. that has a hardness of greater than 120 GPa. A method for manufacture a hard single crystal diamond includes growing a single crystal diamond and annealing the single crystal diamond at pressures in excess of 4.0 GPa and a temperature in excess of 1500 degrees C. to have a hardness in excess of 120 GPa.

Inventors:
Hemley, Russell, Jay.
Mou, Hkwan
Yang, Ji-Siu
Application Number:
JP2006520304A
Publication Date:
June 27, 2012
Filing Date:
July 14, 2004
Export Citation:
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Assignee:
Carnegie Institution of Washington
International Classes:
C30B29/04; C01B31/06; C23C16/27; C30B7/00; C30B21/02; C30B23/00; C30B25/00; C30B25/10; C30B28/06; C30B28/12; C30B28/14; C30B33/00; C30B33/02; G11B27/034; G11B27/036; G11B27/10; G11B27/11; G11B27/34; H04N5/76; H04N5/765; H04N5/775; H04N5/781; H04N9/804; H04N9/82
Domestic Patent References:
JP7331441A
JP7277890A
JP4104992A
JP4238895A
JP64075678A
JP2007210815A
Foreign References:
US20030084839
Other References:
CHIN-SHIUE YAN, et al,Very high growth rate chemical vapor deposition of single-crystal diamond,PANS,2002年10月 1日,Vol.99, No.20,p.12523-12525
COLLINS A.T.,Colour changes produced in natural brown diamonds by h igh-pressure, high-temperature treatment,DIAMOND AND RELATED MATERIALS,2000年,Vol.9,p.113-122
W.E.JACSON AND STEVEN W.WEBB,Synthetic diamond strength enhancement through high pressure/high temperature annealing,MAT.RES.SOC.SYMP.PROC.,1995年,Vol.383,p.267-272
Attorney, Agent or Firm:
Hiroshi Kobayashi
Eiji Katayama
Norio Omori
Taro Ushio
Yasuhito Suzuki



 
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