To provide a fabrication apparatus and fabrication method of a semiconductor device that allow the temperature distribution of a substrate to be rendered uniform.
The fabrication apparatus for the semiconductor device includes a susceptor 2 holding the substrate 1, a heater arranged at a back side of the susceptor 2, a support member 11 located between the substrate 1 and the susceptor 2, including a support portion 12, and a spacer 14 located between the susceptor 2 and the support member 11. An opening formed in the spacer 14 forms a gap 15 between the susceptor 2 and the support member 11, so the quantity of heat conducted from the susceptor 2 directly to the support portion 12 by heat conduction decreases. Consequently, heat transmission to an outer peripheral portion in contact with the support portion 12 of the substrate 1 decreases, so the generation of a temperature distribution on the substrate 1 resulting from a rise in temperature of the substrate 1 at the outer peripheral portion is suppressed to make the temperature distribution of the substrate 1 uniform.
UEDA TOSHIO
WATANABE YOKO
JP2005513773A | 2005-05-12 | |||
JP2006173560A | 2006-06-29 | |||
JPH07249580A | 1995-09-26 | |||
JP2007173417A | 2007-07-05 | |||
JP2004055672A | 2004-02-19 | |||
JP2009502039A | 2009-01-22 | |||
JP2009534824A | 2009-09-24 | |||
JP2004327761A | 2004-11-18 | |||
JPS6242416A | 1987-02-24 | |||
JP2003086522A | 2003-03-20 | |||
JP2005513773A | 2005-05-12 | |||
JP2006173560A | 2006-06-29 | |||
JPH07249580A | 1995-09-26 | |||
JP2007173417A | 2007-07-05 | |||
JP2004055672A | 2004-02-19 | |||
JP2009502039A | 2009-01-22 | |||
JP2009534824A | 2009-09-24 | |||
JP2004327761A | 2004-11-18 |
Toshio Morita
Yoshihei Nakamura
Yutaka Horii
Hisato Noda
Masayuki Sakai
Nobuo Arakawa
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