FABRICATION OF INDIUM-ANTIMONY-ARSENIC SYSTEM COMPOUND SEMICONDUCTOR THIN FILM

Title:

FABRICATION OF INDIUM-ANTIMONY-ARSENIC SYSTEM COMPOUND SEMICONDUCTOR THIN FILM

Document Type and Number:

Japanese Patent JPS5927519

Kind Code:

A

Abstract:

PURPOSE:To fabricate a semiconductor thin film by vacuum-depositing In and Sb on a substrate in such condition that the transport speed rate of Sb to In is kept at 1.0 or more and a substrate temperature is kept within the particular range in the initial stage of vacuum-deposition, and by vacuum-depositing arsenic etc. after forming a thin film in the particular composition ratio with the speed ratio of 1.0 or less. CONSTITUTION:Both In and Sb are vacuum-deposited on a substrate. In this case, these are deposited in the initial condition in such a condition that the transport speed ratio ASb/AIn of both atoms is set to 1.0 or more and a substrate temperature is kept within the range from the substrate temperature Tc of interface given as a function of a degree of vacuum P to 30 deg.C. After nuclei of InSb is formed in the initial stage of vacuum-deposition, deposition is controlled so that the transport speed ratio ASbAIn is kept to 1.0 or less and an InSb system thin film having the composition ratio (FSb/FIn) in the range of 0.65-0.95 is formed. As is individually vacuum-deposited or both As and In are simultaneously vacuum-deposited on the InSb system thin film having a high mobility. Thereby, an InSb1-xAsx thin film is effectively formed.

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