Title:
FABRICATION OF SEMICONDUCTOR DEVICE WAFER
Document Type and Number:
Japanese Patent JPS5927529
Kind Code:
A
Abstract:
PURPOSE:To prevent auto-doping during semiconductor device process by previously providing a nitride film at the rear side of wafer before the mirror- polishing process in order to prevent doping of diffusion impurity into the rear surface of wafer. CONSTITUTION:A silicon nitride film 2 is formed by the reduced pressure vapor growth method using NH3 and SiH2Cl4 as the raw materials on the surface of silicon wafer 1 before mirror-polishing process, a nitride film on the other surface is removed, the wafer surface 3 is exposed and finished like the mirror surface. In the succeeding semiconductor device fabrication process, an oxide film is formed on the finished surface 4 and impurity is selectively diffused. The nitride film 2 is being provided at the rear surface and impurity diffusion is prevented. Thereby, the auto-doping is not generated.
More Like This:
| JP2003086560 | SUBSTRATE TREATMENT APPARATUS |
| JPS63197323 | SEMICONDUCTOR CHIP |
| JP7171343 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD |
Inventors:
HASHIMOTO MASAYUKI
Application Number:
JP13611382A
Publication Date:
February 14, 1984
Filing Date:
August 03, 1982
Export Citation:
Assignee:
CLARION CO LTD
International Classes:
H01L21/304; H01L21/22; (IPC1-7): H01L21/304
Attorney, Agent or Firm:
Takesaburo Nagata