Title:
FABRICATION OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2001068667
Kind Code:
A
Abstract:
To improve the technology for forming a silicide film in silicide process.
A gate electrode 4 is formed on a semiconductor substrate 1 through a gate oxide film 3 which is then coated with an insulation film. Subsequently, the insulation film is etched anisotropically up to a position where the head part of the gate electrode 4 is exposed by a specified amount thus forming a sidewall insulation film 6. Thereafter, a titanium film 8 is formed to cover the gate electrode 4 and the sidewall insulation film 6 and heat treated to form a titanium silicide film on the upper surface of the gate electrode 4.
Inventors:
KITAGAWA KATSUHIKO
Application Number:
JP23841599A
Publication Date:
March 16, 2001
Filing Date:
August 25, 1999
Export Citation:
Assignee:
SANYO ELECTRIC CO
International Classes:
H01L21/8247; H01L21/28; H01L21/336; H01L27/115; H01L29/78; H01L29/788; H01L29/792; (IPC1-7): H01L29/78; H01L21/336; H01L27/115; H01L21/8247; H01L29/788
Attorney, Agent or Firm:
Masano Shibano