Title:
FABRICATION OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH07176627
Kind Code:
A
Abstract:
PURPOSE: To enhance long term reliability by reducing the leakage current of an ultrathin capacitor insulating film in a DRAM, for example.
CONSTITUTION: A step for removing spontaneous oxides through heat treatment and a step for depositing a silicon nitride 9 by low pressure vapor phase epitaxial growth are carried out continuously in SiH4 gas for removing a spontaneous oxide 8 from the surface of polysilicon deposited on a lower layer electrode 7. This method allows deposition of a capacitor insulating film accompanied with no spontaneous oxide on the interface between the polysilicon 7 and the silicon nitride 9.
Inventors:
ANDO KOICHI
Application Number:
JP31862193A
Publication Date:
July 14, 1995
Filing Date:
December 17, 1993
Export Citation:
Assignee:
NEC CORP
International Classes:
H01L21/302; H01L21/02; H01L21/3065; H01L21/316; H01L21/318; H01L21/822; H01L21/8242; H01L27/04; H01L27/10; H01L27/108; (IPC1-7): H01L21/8242; H01L27/108; H01L21/3065; H01L21/316; H01L21/318; H01L27/04; H01L21/822
Domestic Patent References:
| JPH02186632A | 1990-07-20 | |||
| JPH05308064A | 1993-11-19 | |||
| JPH02290050A | 1990-11-29 |
Attorney, Agent or Firm:
Naoki Kyomoto (2 outside)