Title:
FABRICATION OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5932126
Kind Code:
A
Abstract:
PURPOSE:To form mild side surface of film and eliminate disconnection of electrode wiring of second layer by first of all depositing metal film including oxygen on the interlayer insulating film, making high the concentration of oxygen included by heat processing at the surface of film and then executing the etching after providing the mask pattern thereon at the time of forming electrode wiring having the tapered side surface. CONSTITUTION:An SiO2 film 1 which will become the interlayer insulating film is deposited on a semiconductor substrate where an active region is formed, and an Mo film 7 for electrode wiring is deposited thereon by the reactive sputtering method. At this time, oxygen of 28 atom% is included in the film 7 and it is subjected to the heat processing at 1,000 deg.C in the nitrogen gas. Moreover, oxygen in the film 7 is moved and thereby the Mo film 8 where oxygen concentration is high at the surface but it is low in the side of film 1 can be obtained. Then, the specified resist pattern 3 is provided on the film 8, the tapered film 8 is remained just below the pattern 3 by the plasma etching and the other is removed. Thereafter, the pattern 3 is removed, remaining film 8 is included and the electrode wiring of second layer is formed thereon.
Inventors:
OOFUJI SHINICHI
HASHIMOTO CHISATO
HOSOYA TETSUO
HASHIMOTO CHISATO
HOSOYA TETSUO
Application Number:
JP14205382A
Publication Date:
February 21, 1984
Filing Date:
August 18, 1982
Export Citation:
Assignee:
NIPPON TELEGRAPH & TELEPHONE
International Classes:
H01L21/3205; H01L21/28; (IPC1-7): H01L21/88
Attorney, Agent or Firm:
Junnosuke Nakamura