Title:
FABRICATION OF SILICON CARBIDE SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH0786199
Kind Code:
A
Abstract:
PURPOSE: To enable fabrication of a semiconductor device to be conducted by forming a p-type region, introduced with Al at an intended concentration, on an SiC semiconductor.
CONSTITUTION: Outward diffusion of Al is prevented at the time of annealing after ion implantation by forming a silicon nitride film on the surface thus obtaining an intended concentration of Al. Troubles caused by difference of the coefficient of thermal expansion between silicon nitride and SiC is prevented by depositing silicon oxide on the opposite sides of silicon nitride.
More Like This:
Inventors:
KUMAGAI AKIYASU
Application Number:
JP22933293A
Publication Date:
March 31, 1995
Filing Date:
September 16, 1993
Export Citation:
Assignee:
FUJI ELECTRIC CO LTD
International Classes:
H01L21/265; H01L21/04; H01L21/314; (IPC1-7): H01L21/265; H01L21/314
Attorney, Agent or Firm:
Iwao Yamaguchi
Next Patent: FABRICATION OF SEMICONDUCTOR DEVICE