Title:
FABRICATION OF TIN FILM DIODE
Document Type and Number:
Japanese Patent JPH04218983
Kind Code:
A
Abstract:
PURPOSE:To provide a thin film diode having a MIM structure including a current path located parallely to a substrate surface by employing a fabrication process wherein the current path passing through an insulating layer is directed parallely to the substrate surface. CONSTITUTION:There are provided a process where a first metal layer 2 and a second metal layer 3 are formed on a substrate 1, separated via a gap 4A, a process where an insulating layer 4 for filling in the gap 4A is formed by depositing an insulator on the entire surface. Further, there is adopted a fabrication process of a thin film diode where a current path passing through the insulating layer 4 is directed parallely to the substrate 1 surface. Further, there are provided a process where the first metal layer 2 and the second metal layer 3 are formed on the substrate 1, and a process where the first metal layer 2 and the second metal layer 3 are oxidized through anodizing to form an insulating layer for filling the tap 4A. Further, there is included a method of fabrication of a thin film diode where the current path passing through the insulating layer is directed parallely to the substrate 1 surface.
Inventors:
OZAWA KIYOSHI
MAJIMA NIWAJI
MAJIMA NIWAJI
Application Number:
JP40394890A
Publication Date:
August 10, 1992
Filing Date:
December 19, 1990
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L29/86; H01L49/02; (IPC1-7): H01L29/86; H01L49/02
Attorney, Agent or Firm:
Sadaichi Igita
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