Title:
FABRICATION OF WIRING STRUCTURE
Document Type and Number:
Japanese Patent JPS5772351
Kind Code:
A
Abstract:
PURPOSE:To prevent the deterioration of passivation effect and increase of floating capacitance by a method wherein a contact hole forming area part is formed so that it is thiner than in other area and after an insulating layer of a fast-etching speed has been formed other insulating layers are formed. CONSTITUTION:Whole surface of a substrate 1 is covered by SiO2 layer P. Part of SiO2 layer 2 is mad thinner by etching, and unwanted SiO2 layer 2 in the circumference is etched away. Next, phosphor glass layer 3 and CVD SiO2 layer 4 are superimposed in turn on the upper surface of substrate 1. Then, insulating layers 4, 3 and 2 are partially etched away to form a contact hole 6. Afterward, a tungsten layer 9 is laid by spattering and etching. Subsequently, a metal layer 10 consisting of a titan layer and a palladium layer is formed on it, and then a bump electrode 11 is formed on the metal layer 10. Then, etching the backside of substrate 1, a gold layer 12 and a silver layer 13 in turn are superimposed on the backside of substrate 1 to form an electrode.
Inventors:
SATOU AKIHIRO
MOROSHIMA HEIJI
MOROSHIMA HEIJI
Application Number:
JP14831380A
Publication Date:
May 06, 1982
Filing Date:
October 24, 1980
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L21/306; H01L21/28; H01L21/60; H01L23/485; H01L29/47; H01L29/872; (IPC1-7): H01L21/28; H01L21/306; H01L21/92; H01L29/91