To detect a disconnection of lower-layer wiring without removing upper-layer wiring in a semiconductor device of a multilayer interconnection structure.

In the analysis of a disconnection in the lower-layer wiring 4 at the semiconductor device in a multilayer interconnection structure having the lower-layer wiring 4 and upper-layer wiring 6, electron beams are applied to the lower-layer wiring 4 by a high-acceleration voltage that penetrates the upper-layer wiring 6 when applying electron beams to the lower-layer wiring 4, thus detecting the disconnection in the lower-layer wiring 4 without removing the upper-layer wiring.