Title:
Feature restoration by tungsten
Document Type and Number:
Japanese Patent JP6273257
Kind Code:
B2
Abstract:
Described herein are methods of filling features with tungsten and related systems and apparatus. The methods include inside-out fill techniques as well as conformal deposition in features. Inside-out fill techniques can include selective deposition on etched tungsten layers in features. Conformal and non-conformal etch techniques can be used according to various implementations. The methods described herein can be used to fill vertical features, such as in tungsten vias, and horizontal features, such as vertical NAND (VNAND) word lines. Examples of applications include logic and memory contact fill, DRAM buried word line fill, vertically integrated memory gate/word line fill, and 3-D integration with through-silicon vias (TSVs).
Inventors:
Chandrasheker Anand
Jen Esther
Humayun Lasina
Danek Michal
Gao Juwen
One Dotty
Jen Esther
Humayun Lasina
Danek Michal
Gao Juwen
One Dotty
Application Number:
JP2015503547A
Publication Date:
January 31, 2018
Filing Date:
March 27, 2013
Export Citation:
Assignee:
NOVELLUS SYSTEMS INCORPORATED
International Classes:
H01L21/768; H01L21/28; H01L21/285; H01L21/3205; H01L21/336; H01L23/532; H01L27/10; H01L29/788; H01L29/792
Domestic Patent References:
| JP5226280A | ||||
| JP4142061A | ||||
| JP7147321A | ||||
| JP2002016066A | ||||
| JP2010251760A | ||||
| JP2011035366A | ||||
| JP7226393A | ||||
| JP2187031A |
Foreign References:
| US20100130002 |
Attorney, Agent or Firm:
Meisei International Patent Office