Title:
FERROELECTRIC CAPACITOR DEVICE AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JP3383188
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To simultaneously solve the problems on the adhesion of a pole material to a substrate and on the characteristic deterioration, such as fatigue, leakage current, etc., of a ferroelectric thin film capacitor by forming a conductive oxide/metal/conductive oxide hetero-structure on an oxidized silicon substrate.
SOLUTION: After a than Rh2O3 layer 11 is formed on an SiO2 layer 10, a surface RhxOy layer 13 is formed by sputtering a metallic Pt-Rh layer 12 itself and an alloy target and a dielectric layer 14 is formed on the layer 13. Then upper electrodes 15 and 16 are formed by again performing the insitu sputtering of a multilayered Rh2O3/Pt-Rh and/or Rh2O3 in a capacitor device structure. Therefore, the problems on the adhesion of a pole material to a substrate and the characteristic deterioration, such as the fatigue, leakage current, etc., of a ferroelectric thin film capacitor device can be solved simultaneously.
Inventors:
Sesh B. Death
Hemansh Dee. Bihat
Diplip P. Vige
Hemansh Dee. Bihat
Diplip P. Vige
Application Number:
JP18413197A
Publication Date:
March 04, 2003
Filing Date:
July 09, 1997
Export Citation:
Assignee:
Sharp Corporation
Virginia Tech Intellectual Property Incorporated
Virginia Tech Intellectual Property Incorporated
International Classes:
H01G7/06; H01L21/02; H01L21/822; H01L21/8242; H01L21/8246; H01L21/8247; H01L27/04; H01L27/10; H01L27/105; H01L27/108; H01L29/788; H01L29/792; (IPC1-7): H01L27/105; H01G7/06; H01L21/822; H01L27/04
Domestic Patent References:
| JP668529A | ||||
| JP8213560A | ||||
| JP793969A | ||||
| JP8222711A | ||||
| JP9102591A |
Other References:
【文献】国際公開96/16447(WO,A1)
Attorney, Agent or Firm:
Shusaku Yamamoto