FERROELECTRIC CRYSTAL THIN FILM AND FERROELECTRIC THIN FILM ELEMENT HAVING THE FERROELECTRIC CRYSTAL THIN FILM AND PRODUCTION OF THE FERROELECTRIC CRYSTAL THIN FILM

Title:

FERROELECTRIC CRYSTAL THIN FILM AND FERROELECTRIC THIN FILM ELEMENT HAVING THE FERROELECTRIC CRYSTAL THIN FILM AND PRODUCTION OF THE FERROELECTRIC CRYSTAL THIN FILM

Document Type and Number:

Japanese Patent JPH082919

Kind Code:

A

Abstract:

PURPOSE: To obtain a Bi4Ti3O12 ferroelectric crystal thin film improved in the reliability of ferroelectric characteristics and a device using the thin film.

CONSTITUTION: Strontium or barium element is added to Bi4Ti3O12 preferably in an amount of 5-10mol.% to form the ferrochelectric crystal thin film. The ferroelectric crystal thin film is formed on a single crystal semiconductor substrate, and the formed substrate is used to form the ferroelectric thin film element.

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Inventors:

MATSUNAGA HIRONORI
KOBA MASAYOSHI

Application Number:

JP13435994A

Publication Date:

January 09, 1996

Filing Date:

June 16, 1994

Export Citation:

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Assignee:

SHARP KK

International Classes:

C04B35/46; C01G29/00; C04B35/475; C23C16/40; C23C18/12; C23C24/10; C30B29/32; H01B3/00; H01L21/822; H01L21/8242; H01L21/8246; H01L27/04; H01L27/10; H01L27/105; H01L27/108; H01L37/02; H01L41/08; H01L41/22; (IPC1-7): C01G29/00; C04B35/46; C23C16/40; C23C18/12; C30B29/32; H01B3/00; H01L27/04; H01L21/822; H01L21/8242; H01L27/108; H01L37/02; H01L41/08; H01L41/22

Attorney, Agent or Firm:

Yoshio Kawaguchi (1 person outside)

Next Patent: PRODUCTION OF TUNGSTIC ACID CRYSTAL HAVING HIGH PURITY