To make a signal voltage a low voltage and to obtain the high speed of an element driving while obtaining a wide driving margin by making an element a constitution in which ferroelectic liquid crystal indicates an action in which an element is switched in between bistable states with respect to a rewriting voltage waveform and reveals a reverse memory phenomenon with respect to a non-rewriting voltage waveform.
Ferroelectric liquid crystal 22 held in between one pair of substrates 15, 20 makes an element so as to be normally switched when the rewriting voltage waveform is impressed and, besides, makes the element so that the switching is not to be generated by revealing the reverse memory phenomenon only when the non- rewriting voltage waveform is impressed. It is desirable that an element structure in which the reverse memory phenomenon is relatively revealed easily and a driving method having the non-rewriting voltage waveform in which the reverse memory phenomenon is easily revealed are combined in order to reveal the reverse memory phenomenon only when the non-rewriting voltage waveform is impressed. Thus, the reverse memory phenomenon in which the liquid crystal element becomes not to be switched regardless of a voltage value and a pulse width is generated with respect to the non-rewriting voltage waveform.
KANEKO TAKESHI
KIDO MASAMI
KOUDEN MITSUHIRO
UNITED KINGDOM GOVERNMENT