PURPOSE: To provide a ferroelectric memory device which can store multivalue information or pseudo information by handling the direction of polarization of a ferroelectric substance and the quantity of its charge as information.

CONSTITUTION: A memory device is a ferroelectric memory device which is constituted of connecting a load capacitor CL in series to the ferroelectric capacitor CFE being made by catching a ferroelectric film, which can store information as time polarized condition of the quantity of charge set to an optional value, from both sides of conductor films, and in which the information to be stored is written in or read out as the ferroelectric polarization by the optional quantity of charge or the direction.