Title:
強誘電体メモリ
Document Type and Number:
Japanese Patent JP4029295
Kind Code:
B2
Abstract:
A ferroelectric memory includes a memory cell array in which memory cells having a ferroelectric capacitor are arranged in a matrix shape. The memory cell array includes a ferroelectric layer formed out of a thin film made of a Bi layer-structured ferroelectric single crystal having a (001) orientation and which is patterned such that the ferroelectric layer has two or more side walls perpendicular to a (100) axis of the Bi layer-structured ferroelectrics, first electrodes contacting at least one of the side walls of the ferroelectric layer and which are formed in stripe patterns extending along the one side wall, and second electrodes which contact the other side wall of the ferroelectric layer not contacting the first electrodes and which are formed in stripe patterns to intersect the first electrodes. The memory cells are formed at intersections between the first electrodes and the second electrodes.
Inventors:
Junichi Karasawa
Higuchi Tenkou
Setsuya Iwashita
Higuchi Tenkou
Setsuya Iwashita
Application Number:
JP2004028997A
Publication Date:
January 09, 2008
Filing Date:
February 05, 2004
Export Citation:
Assignee:
Seiko Epson Corporation
International Classes:
H01L21/8246; H01L27/105; H01L27/10; H01L29/745
Domestic Patent References:
| JP8306865A | ||||
| JP8340087A | ||||
| JP2003243627A | ||||
| JP2004193258A |
Attorney, Agent or Firm:
Yukio Fuse
Mitsue Obuchi
Mitsue Obuchi