Title:
強誘電体ランダムアクセスメモリ
Document Type and Number:
Japanese Patent JP4149979
Kind Code:
B2
Abstract:
A ferromagnetic random access memory includes a first and second blocks. Each of the first and second blocks includes a switch transistor and memory cells connected in series between a first and second end. The memory cell includes a ferromagnetic capacitor and a cell transistor connected in parallel. A first plate line is connected to each of the first end of the first and second blocks. A first block selection transistor includes a current path one end of which is connected to the second end of the first block. A second block selection transistor includes a current path one end of which is connected to the second end of the second block. A first bit line is connected to each of another end of the current path in the first and second block selection transistors.
More Like This:
Inventors:
Shinichiro Shiratake
Application Number:
JP2004269954A
Publication Date:
September 17, 2008
Filing Date:
September 16, 2004
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
G11C11/22
Domestic Patent References:
| JP2000022010A | ||||
| JP2001250375A |
Attorney, Agent or Firm:
Takehiko Suzue
Satoshi Kono
Makoto Nakamura
Kurata Masatoshi
Takashi Mine
Yoshihiro Fukuhara
Sadao Muramatsu
Ryo Hashimoto
Satoshi Kono
Makoto Nakamura
Kurata Masatoshi
Takashi Mine
Yoshihiro Fukuhara
Sadao Muramatsu
Ryo Hashimoto