PURPOSE: To obtain a ferroelectric substance thin film device made as a device without impairing a characteristic of a ferroelectric substance thin film in a thin film device comprising the ferroelectric substance thin film.
CONSTITUTION: A (001) monocrystal MgO thin plate (thickness 50μm) is adhered to a Si substrate 11 and a Pt thin film 13 (thickness 200nm) is formed thereon as a lower electrode by a sputtering method. A PLT (Pb1-xLaxTi1-x-/4O3; x=0.1) c-axis orientation thin film 14 (thickness IPIII) is formed as a ferroelectric substance thin film by a high frequency sputtering method, and a Pt thin film 15 (thickness 200nm) of an upper electrode and a polyimide film 16 (thickness 3μm) as a protection film are respectively formed again by a sputtering method. A MgO thin plate is removed by etching and a space is provided between at least a part of a surface on the substrate side of the ferroelectric substance thin film and the substrate to make a ferroelectric substance thin film device.
NAGAO NOBUAKI
IIJIMA KENJI
