PURPOSE: To provide a ferroelectric element composed of a substrate and a ferroelectric thin film, wherein the substrate has a specific average thermal expansion coefficient between room temperature and the film-forming temperature of the ferroelectric thin film and the ferroelectric thin film is strongly orientated in a prescribed direction.
CONSTITUTION: A plasma is generated between a pair of parallelly arranged electrodes by high-frequency power in a vacuum chamber in the presence of a reactive gas such as oxygen. A raw material gas composed of an organic metal complex salt such as magnesium acetylacetonate is introduced into the plasma and decomposed. The decomposed gas is chemically deposited on a substrate having an average thermal expansion coefficient of ≥70×10-7/°C between room temperature and the ferroelectric film formation temperature to form an intermediate layer such as an MgO thin film having an NaCl-type crystal structure oriented in <100> plane. This ferroelectric thin film element is produced by forming a tetragonal perovskite-type ferroel-ectric thin film having a composition expressed by PbLa1-xTi1-x/4O3 (0≤x≤0.25) and strongly oriented in <001> direction on the intermediate layer by a magnetron sputtering method using PbO, La2O3, TiO2, etc., as a target.
FUJII SATORU
FUJII AKIYUKI
TOMOSAWA ATSUSHI
TORII HIDEO
