Title:
FERROELECTRIC THIN-FILM ELEMENT
Document Type and Number:
Japanese Patent JPH05235416
Kind Code:
A
Abstract:
PURPOSE:To obtain a ferroelectric thin-film element having excellent ferroelectricity by using a ferroelectric material, in which the axis of easy polarization is directed in the (111) direction. CONSTITUTION:In a ferroelectric thin-film element 1, a first thin-film electrode 3 composed of an Ni-Cr-Al based alloy thin-film is formed onto a substrate 2, and a ferroelectric thin-film 4, which consists of a ferroelectric material having a composition, in which the direction of the axis of easy polarization is directed in the (111) direction, and in which the crystalline direction is oriented in the (111) direction, is formed onto the first thin-film electrode 3.
Inventors:
OGAWA TOSHIO
Application Number:
JP3524392A
Publication Date:
September 10, 1993
Filing Date:
February 21, 1992
Export Citation:
Assignee:
MURATA MANUFACTURING CO
International Classes:
G01J1/02; G01J5/02; G01J5/34; H01L29/51; H01L37/02; H01L41/04; (IPC1-7): H01L37/02; G01J1/02; G01J5/02; H01L41/04
Attorney, Agent or Firm:
Miyazaki Main Tax