Title:
FERROELECTRIC THIN FILM ELEMENT
Document Type and Number:
Japanese Patent JPH05283756
Kind Code:
A
Abstract:
PURPOSE:To obtain a ferroelectric thin film element which is capable of fully displaying its ferroelectric properties and in which a short circuit is hardly produced between an upper and a lower electrode. CONSTITUTION:An MgO thin film 3 orientated in a (100) direction, a lower electrode 4 of Ni-Cr-Al alloy thin film orientated in a (100) direction, a ferroelectric thin film 5 of PbTiO3 thin film orientated in a (111) direction, and an upper electrode 6 are successively formed in this sequence on a silicon substrate 2 of (100) plane.
Inventors:
Satoshi Shindo
Toshio Ogawa
Senda welfare
Tohru Kasagi
Toshio Ogawa
Senda welfare
Tohru Kasagi
Application Number:
JP7717192A
Publication Date:
October 29, 1993
Filing Date:
March 31, 1992
Export Citation:
Assignee:
MURATA MANUFACTURING CO.,LTD.
International Classes:
G01J1/02; G01J5/02; G01J5/34; H01L21/02; H01L21/8247; H01L29/788; H01L29/792; H01L37/02; (IPC1-7): H01L37/02; G01J1/02; G01J5/02
Attorney, Agent or Firm:
Miya Saki Main tax (1 person outside)