FERROELECTRIC THIN-FILM ELEMENT

Japanese Patent JPH08186182

A

PURPOSE: To improve crystallizability, orientation property, dielectric characteristics, pyroelectric characteristics, and ferroelectric characteristics by providing a ferroelectric film where the lattice constant of Perovskite-type tetragonal crystal changes in the film thickness direction between upper and lower electrodes.

CONSTITUTION: MgO single crystal which is subjected to mirror-surface polishing after performing cleavage in crystal direction (100) is used as a substrate 1, and Pt thin film is former as a lower electrode 2 by RF sputtering. Then, a ferroelectric thin film 3 is grown by the multidimensional ECR sputtering. Lead, lanthanum, titanium, and zirconium metal are sputtered. The composition of the thin film is controlled by the correlation between the power fed to each target in advance and the composition of the created thin film and by changing the power. Then, the Pt thin film is formed on the thin film as an upper electrode 4 by the RF sputtering. The created thin-film element has a structure where the composition is graded and has a large pyroelectric coefficient although no polarization treatment is performed.

NAGAO NOBUAKI
TAKEUCHI TAKAYUKI
IIJIMA KENJI

JP32795494A

July 16, 1996

December 28, 1994

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MATSUSHITA ELECTRIC IND CO LTD

G01J1/02; G01J5/02; G01J5/34; H01L21/316; H01L21/822; H01L21/8246; H01L21/8247; H01L27/04; H01L27/10; H01L27/105; H01L29/788; H01L29/792; H01L37/02; H01L41/18; (IPC1-7): H01L21/8247; H01L29/788; H01L29/792; H01L21/316; H01L27/04; H01L21/822; H01L27/10; H01L37/02; H01L41/18

Akira Kobiji (2 outside)

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