FERROELECTRIC THIN FILM FORMING ELECTRODE

Title:

FERROELECTRIC THIN FILM FORMING ELECTRODE

Document Type and Number:

Japanese Patent JPH08139307

Kind Code:

A

Abstract:

PURPOSE: To provide an electrode for forming a (111) orientation film of a perovskite lead-base oxide ferroelectric having a comparatively large remaining polarization value on a surface to integrate higher.

CONSTITUTION: A SiO2 layer 14 is formed on a silicon substrate 12, and a lower electrode 18 is formed thereon via a Ti layer 16 working as a buffer layer. As the lower electrode 18, an alloy thin film preferentially making the (111) orientation of at least one species or more of noble metals selected from Pt, Au, Pd, Ag and Rh and at least one species or more of metals having a crystal structure of a face-centered cube in a single body other than the noble metals is used. A layer 20 mixed with PbO is formed on a surface of this alloy thin metal. When a PLT ferroelectric thin film 22 is formed on the electrode formed by these lower electrode 18 and mixed layer 20, this ferroelectric thin film 22 is preferentially made the (111) orientation.

Inventors:

AKETO KUNIO
SAKATA JIRO
TAGA YASUNORI

Application Number:

JP27001094A

Publication Date:

May 31, 1996

Filing Date:

November 02, 1994

Export Citation:

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Assignee:

TOYOTA CENTRAL RES & DEV

International Classes:

H01L29/43; H01L21/203; H01L21/28; H01L21/8247; H01L29/788; H01L29/792; H01L37/02; (IPC1-7): H01L29/43; H01L21/8247; H01L29/788; H01L29/792; H01L37/02

Attorney, Agent or Firm:

Kenji Yoshida (2 outside)

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