強磁性膜、磁気抵抗素子、及び磁気ランダムアクセスメモリ

Title:

強磁性膜、磁気抵抗素子、及び磁気ランダムアクセスメモリ

Document Type and Number:

Japanese Patent JPWO2006054469

Kind Code:

A

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Inventors:

Hiroaki Honjo
Toshihiko Nagase
Nobuyuki Ishiwata
Katsuya Nishiyama

Application Number:

JP2005020539W

Publication Date:

May 26, 2006

Filing Date:

November 09, 2005

Export Citation:

Assignee:

NEC Corp.
Toshiba Corp.

International Classes:

H01F10/32; H01L43/08; H01L21/8246; H01F10/16; H01F41/22; H01L27/105

Attorney, Agent or Firm:

Minoru Kudo

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