Title:
FIELD-EFFECT SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Document Type and Number:
Japanese Patent JP2014222723
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To improve device characteristics by reducing the contact resistance between a SiGe layer and wiring without causing the occurrence of defect in the SiGe layer in a configuration that provides tensile strain to a Ge channel through the SiGe layer.SOLUTION: A field-effect semiconductor device having a Ge channel and a source-drain region of SiGe includes: a semiconductor layer 10 containing Ge; a gate electrode 31 provided on the semiconductor layer 10 via a gate insulating film 20; a source-drain region 60 provided in the semiconductor layer 10 so as to sandwich a channel region under the gate electrode 31, providing tensile strain to the channel region, and composed of SiGe(0
Inventors:
KAMIMUTA YUICHI
MORIYAMA YOSHIHIKO
MORIYAMA YOSHIHIKO
Application Number:
JP2013102017A
Publication Date:
November 27, 2014
Filing Date:
May 14, 2013
Export Citation:
Assignee:
NAT INST OF ADV IND & TECHNOL
International Classes:
H01L21/336; H01L21/28; H01L21/768; H01L23/522; H01L29/417; H01L29/78
Attorney, Agent or Firm:
Masatoshi Kurata
Toshihiro Fukuhara
Makoto Nakamura
Nobuhisa Nogawa
Toshiro Shirane
Peak Takashi
Yukinaga Yasujiro
Naoki Kono
Sunagawa 克
Iseki Mamoru 3
Takao Akaho
Tadashi Inoue
Tatsushi Sato
Okada Kishi
Mihoko Horiuchi
Masanori Takeuchi
Toshihiro Fukuhara
Makoto Nakamura
Nobuhisa Nogawa
Toshiro Shirane
Peak Takashi
Yukinaga Yasujiro
Naoki Kono
Sunagawa 克
Iseki Mamoru 3
Takao Akaho
Tadashi Inoue
Tatsushi Sato
Okada Kishi
Mihoko Horiuchi
Masanori Takeuchi