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Title:
FIELD EFFECT TRANSISTOR AMPLIFIER
Document Type and Number:
Japanese Patent JPS56109008
Kind Code:
A
Abstract:

PURPOSE: To make the amplification with low distortion factor with a simple constitution, by making equal the supply current to the 1st and 2nd FETs, through equal emitter resistance for bipolar transistor and common connection between the base and the collector of one transistor.

CONSTITUTION: An input signal VIN is input to the gate of FETQ1, and the output is the gate input to FETQ2 of the next stage. A current Miller circuit 1 is provided, which feeds equal current to FETsQ1, Q2. This circuit is formed with bipolar TRsQ3, Q4 in common connection of the base and emitter resistors R2, R3. Further, the base and collector of TRQ4 is in common connection and the supply current to FETsQ1, Q2 can equally be set by the selection of R2=R3. Thus, with such a simple constitution, the amplification of low distortion factor can be made.


Inventors:
ISHIKAWA KIKUO
KIKUCHI TAKAHARU
Application Number:
JP1172480A
Publication Date:
August 29, 1981
Filing Date:
February 02, 1980
Export Citation:
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Assignee:
PIONEER ELECTRONIC CORP
International Classes:
H03F1/32; H03F3/16; H03F3/34; H03F3/345; (IPC1-7): H03F1/32; H03F3/16



 
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