Title:
電界効果型トランジスタ及び表示装置
Document Type and Number:
Japanese Patent JP5538797
Kind Code:
B2
Abstract:
A field-effect transistor, which is a thin film transistor, comprises: a semiconductor layer (11) as a channel layer; and a gate electrode (15) disposed over the semiconductor layer (11) with a gate insulating film (12) therebetween, wherein the semiconductor layer includes a first amorphous oxide semiconductor layer (11a) comprising Zn and In, the semiconductor layer further comprises a second amorphous oxide semiconductor layer (11b) comprising Zn and In, the composition ratio, Zn/(In + Zn), of Zn contained in the first amorphous oxide semiconductor layer (11a) is smaller than the composition ratio, Zn/(In + Zn), of Zn contained in the second amorphous oxide semiconductor layer (11b), and the first amorphous oxide semiconductor layer is disposed between the gate insulating layer and the second amorphous oxide semiconductor layer.
Inventors:
Ueda Miki
Tatsuya Iwasaki
Naho Itagaki
Goyal Amita
Tatsuya Iwasaki
Naho Itagaki
Goyal Amita
Application Number:
JP2009222514A
Publication Date:
July 02, 2014
Filing Date:
September 28, 2009
Export Citation:
Assignee:
Canon Inc
International Classes:
H01L29/786; H01L21/336; H01L51/50
Domestic Patent References:
| JP2006165529A | ||||
| JP2007073704A |
Other References:
岩崎 達哉 他,Zn-In-O系薄膜を用いた電界効果トランジスタとその組成依存性,応用物理学関係連合講演会講演予稿集2007春,(社)応用物理学会,2007年 3月27日,第686ページ
板垣 奈穂 他,In-X-0(X=B,Mg,Al,Si,Ti,Ga,Ge,Mo,Sn)をチャネル層に用いたTFrとその特性の元素X依存性,第69回応用物理学会学術講演会講演予稿集 Vol.2,2008年 9月 2日,第537ページ
板垣 奈穂 他,In-X-0(X=B,Mg,Al,Si,Ti,Ga,Ge,Mo,Sn)をチャネル層に用いたTFrとその特性の元素X依存性,第69回応用物理学会学術講演会講演予稿集 Vol.2,2008年 9月 2日,第537ページ
Attorney, Agent or Firm:
Takuma Abe
Sogo Kuroiwa
Sogo Kuroiwa