Title:
FIELD-EFFECT TRANSISTOR AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JP3400309
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To obtain a field-effect transistor for improving high frequency characteristics.
SOLUTION: A low resistance metal film 40, made of tungsten (W) or the like is formed so as to be brought into contact with at least the overall upper part surface of a folded gate electrode 30 formed on a semiconductor substrate between a source region 32 and a drain region 34 formed on the substrate. With such a configuration, a gate resistance can be very much reduced, and a drain junction capacity at a unit gate width can be reduced. Therefore, a ratio fmax/fT of the maximum oscillation frequency (fmax) to a cut-off frequency (fT) can be increased, and hence a MOSFET (field-effect transistor) can be operated in a higher frequency band.
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Inventors:
Hideaki Matsuhashi
Application Number:
JP24004797A
Publication Date:
April 28, 2003
Filing Date:
September 04, 1997
Export Citation:
Assignee:
Oki Electric Industry Co., Ltd.
International Classes:
H01L29/78; (IPC1-7): H01L29/78
Domestic Patent References:
| JP6350085A | ||||
| JP362970A | ||||
| JP1133368A | ||||
| JP5656666A | ||||
| JP546872U |
Attorney, Agent or Firm:
Atsushi Nakajima (3 outside)