Title:
FIELD-EFFECT TRANSISTOR AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JP3521246
Kind Code:
B2
Abstract:
PURPOSE: To reduce the degree that the periphery of the end portion of a second conductivity type diffusion region may turn into a first conductivity type diffusion region, as compared with the conventional case, by forming the second conductivity type diffusion region and the first conductivity diffusion region constituting a channel part, in the manner in which the respective transversal ends almost coincide with each other.
CONSTITUTION: A P-type diffusion region 13 is constituted of a first P-type diffusion region 13a and a second P-type diffusion region 13b deeper than an N-type diffusion region 17 which is formed on the surface layer part of the region 13a and constitutes a channel part 17. These diffusion regions 13b, 17 are formed on the substrate 11 in the following manner; the end portion in the transversal direction of the P-type diffusion region 13, i.e., the end portion in the transversal direction of the second P-type diffusion region 13b coincides with the end portion in the transversal direction of the N+ type diffusion region 17 constituting the channel part. Thereby the degree that the periphery of the end portion of the second conductivity type diffusion region turns to the first conductivity type diffusion region of high concentration is reduced, so that electric field concentration of the second conductivity type region is relieved.
Inventors:
Furuta, Kenichi
Akiyama, Yutaka
Akiyama, Yutaka
Application Number:
JP6752095A
Publication Date:
April 19, 2004
Filing Date:
March 27, 1995
Export Citation:
Assignee:
OKI ELECTRIC IND CO LTD
International Classes:
H01L21/336; H01L29/78; (IPC1-7): H01L29/78
Attorney, Agent or Firm:
大垣 孝