To provide a field-effect transistor manufactured by using a gate insulating layer having surface smoothness and low surface energy wherein sufficiently high charge carrier conduction performance is imparted to the field-effect transistor, to provide a method of manufacturing the field-effect transistor, and to provide an image display apparatus.

The field-effect transistor includes a substrate, a gate electrode formed on the substrate, the gate insulating layer formed on the gate electrode, an organic semiconductor formed on the gate insulating layer, and a source electrode and a drain electrode, wherein the gate insulating layer is a laminate of two or more layers and a gate insulating layer surface coming into contact with the organic semiconductor has an arithmetic mean roughness Ra or square mean roughness RMS of less than 0.3 nm.